DocumentCode
2237601
Title
A low-power CMOS compatible integrated gas sensor using maskless tin oxide sputtering
Author
Sheng, Lie-yi ; Tang, Zhenan ; Wu, Jian ; Chan, Philip C.H. ; Sin, Johnny K O
Author_Institution
Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., Hong Kong
Volume
2
fYear
1997
fDate
16-19 Jun 1997
Firstpage
939
Abstract
This paper describes a CMOS compatible integrated gas sensor. The device was designed to make the front-end of the fabrication fully compatible with the standard CMOS process. The non-CMOS compatible fabrication steps were carried out as post-processing steps. This included the silicon anisotropic etch to create the thermally isolated micro-hotplate (MHP) and the deposition of gas-sensitive thin-film. By using maskless RF SnO2 sputtering, we realized high sensitivity to gases, such as ethanol and hydrogen
Keywords
etching; gas sensors; microsensors; semiconductor materials; sputter deposition; tin compounds; CMOS compatible sensor; SnO2; anisotropic etch; fabrication front-end; integrated gas sensor; maskless oxide sputtering; post-processing steps; thermally isolated micro-hotplate; Anisotropic magnetoresistance; CMOS process; Fabrication; Gas detectors; Gases; Radio frequency; Semiconductor thin films; Silicon; Sputter etching; Sputtering;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Sensors and Actuators, 1997. TRANSDUCERS '97 Chicago., 1997 International Conference on
Conference_Location
Chicago, IL
Print_ISBN
0-7803-3829-4
Type
conf
DOI
10.1109/SENSOR.1997.635257
Filename
635257
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