DocumentCode
2237698
Title
Advanced chemical downstream etch and strip capability
Author
Merry, Walter
Author_Institution
Appl. Mater., Santa Clara, CA, USA
fYear
1996
fDate
12-14 Nov 1996
Firstpage
314
Lastpage
316
Abstract
Semiconductor manufacturing has slowly but surely been moving from wet etch and strip towards all-dry processing. With the advent of dry isotropic chambers on cluster tool platforms, it is now more attractive than ever to integrate several wet/dry steps into a single all-dry sequence. Target applications include isotropic oxide etch, high-selectivity nitride and poly strip and a variety of soft etches for damage, contaminant and residue removal
Keywords
integrated circuit technology; sputter etching; surface contamination; all-dry processing; chemical downstream etch; cluster tool platforms; dry isotropic chambers; high-selectivity nitride; isotropic oxide etch; poly strip; semiconductor manufacturing; soft etches; strip capability; wet/dry steps; Chemicals; Dry etching; Hardware; Plasma applications; Plasma chemistry; Plasma materials processing; Plasma sources; Semiconductor device manufacture; Strips; Wet etching;
fLanguage
English
Publisher
ieee
Conference_Titel
Advanced Semiconductor Manufacturing Conference and Workshop, 1996. ASMC 96 Proceedings. IEEE/SEMI 1996
Conference_Location
Cambridge, MA
ISSN
1078-8743
Print_ISBN
0-7803-3371-3
Type
conf
DOI
10.1109/ASMC.1996.558027
Filename
558027
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