Excellent resistive switching memory: Influence of GeOx in WOx mixture

Author

Rahaman, S.Z. ; Maikap, S. ; Chen, W.S. ; Tien, T.C. ; Lee, H.Y. ; Chen, F.T. ; Kao, M. -J ; Tsai, M. -J

Author_Institution

Dept. of Electron. Eng., Chang Gung Univ., Taoyuan, Taiwan

fYear

2012

fDate

23-25 April 2012

Firstpage

1

Lastpage

2

Abstract

Influence of GeO_x layer on resistive switching memory performance in a simple and CMOS compatible W/WO_x/GeO_x:WO_x mixture/W structure has been investigated for the first time. All layers are confirmed by both HRTEM and XPS. This memory device has enhanced performance in terms of the resistance ratio, uniformity, and program/erase cycles as compared to W/WO_x/W structure. An excellent read endurance and program/erase cycles of >;10⁶ at large V_read of ±1V are obtained. Furthermore, the memory device exhibits robust data retention at 85°C. This device can be operated as low current as 0.1 μA.

Keywords

CMOS memory circuits; germanium compounds; tungsten; tungsten compounds; CMOS; HRTEM; W-WO_x-GeO_x:WO_x; XPS; program-erase cycle; read endurance; resistance ratio; resistive switching memory; CMOS integrated circuits; Nanoscale devices; Performance evaluation; Resistance; Sputtering; Switches; Switching circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, Systems, and Applications (VLSI-TSA), 2012 International Symposium on

Conference_Location

Hsinchu

ISSN

1930-8868

Print_ISBN

978-1-4577-2083-3

Type

conf

DOI

10.1109/VLSI-TSA.2012.6210124

Filename

6210124