DocumentCode
2237740
Title
CW Sub-Terahertz wave generation by GaAs:O Materials
Author
Chen, Kejian ; Li, Yutai ; Cheung, WingYiu ; Wang, Weiwen ; Pan, CiLing ; Chan, KamTai
Author_Institution
Dept. of Electron. Eng., Chinese Univ. of Hong Kong, Hong Kong
fYear
2007
fDate
26-31 Aug. 2007
Firstpage
1
Lastpage
2
Abstract
Oxygen implanted GaAs was used for terahertz wave emitter fabrication. CW terahertz waves are measured from this kind of material. We take sampling in the range of 0.25 to 0.5 THz. The measured output power is in ten nW range.
Keywords
III-V semiconductors; dipole antennas; gallium arsenide; ion implantation; microwave materials; oxygen; submillimetre wave generation; GaAs:O; GaAs:O materials; continuous-wave generation; dipole antenna; emitter fabrication; frequency 0.25 THz to 0.5 THz; oxygen implantation; subterahertz wave generation; terahertz wave emitter; Biomedical measurements; Dipole antennas; Extraterrestrial measurements; Fabrication; Frequency; Gallium arsenide; Power generation; Power measurement; Sampling methods; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics - Pacific Rim, 2007. CLEO/Pacific Rim 2007. Conference on
Conference_Location
Seoul
Print_ISBN
978-1-4244-1173-3
Electronic_ISBN
978-1-4244-1174-0
Type
conf
DOI
10.1109/CLEOPR.2007.4391124
Filename
4391124
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