• DocumentCode
    2237743
  • Title

    Emerging memory technologies: Challenges and opportunities

  • Author

    DeSalvo, B. ; Sousa, V. ; Perniola, L. ; Jahan, C. ; Maitrejean, S. ; Nodin, J.F. ; Cagli, C. ; Jousseaume, V. ; Molas, G. ; Vianello, E. ; Charpin, C. ; Jalaguier, E.

  • Author_Institution
    LETI, MINATEC, Grenoble, France
  • fYear
    2012
  • fDate
    23-25 April 2012
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    In this paper, the evolution, limits and challenges of charge-storage Silicon Non Volatile Memory technologies are presented, with a special attention for 3D architectures. Then, new resistive memory technologies are introduced. Main principles, challenges and opportunities are discussed. In particular, an overview of our recent research work on phase change memory (PCM) and metal oxide resistive switching memory (OxRRAM) will be given.
  • Keywords
    memory architecture; phase change memories; 3D architectures; charge-storage silicon nonvolatile memory technologies; emerging memory technologies; metal oxide resistive switching memory; phase change memory; resistive memory technologies; Abstracts; Phase change materials; Random access memory; Reliability; Switches; Three dimensional displays;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, Systems, and Applications (VLSI-TSA), 2012 International Symposium on
  • Conference_Location
    Hsinchu
  • ISSN
    1930-8868
  • Print_ISBN
    978-1-4577-2083-3
  • Type

    conf

  • DOI
    10.1109/VLSI-TSA.2012.6210125
  • Filename
    6210125
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2237743