Title :
Experimental study on plasma engineering in 6500 V IGBTs
Author :
Wikstrom, Tobias ; Bauer, Friedhelm ; Linder, Stefan ; Fichtner, Wolfgang
Author_Institution :
Integrated Syst. Lab., Swiss Federal Inst. of Technol., Zurich, Switzerland
Abstract :
This paper discusses the design of high-voltage Insulated Gate Bipolar Transistors (IGBTs), especially the effects on the on-state excess carrier distribution and its consequences for the IGBT´s on-state, turn-off and Safe Operating Area (SOA) properties. It is concluded that by careful design, considerable robustness is achievable together with total losses that are comparable to a state-of-the-art GCT Thyristor of similar voltage class
Keywords :
insulated gate bipolar transistors; power transistors; semiconductor plasma; 6500 V; HV IGBT; high-voltage insulated gate bipolar transistor; loss; on-state excess carrier distribution; plasma engineering; safe operating area; turn-off; Anodes; Cathodes; Current-voltage characteristics; Design engineering; Insulated gate bipolar transistors; Plasma applications; Plasma devices; Substrates; Thyristors; Voltage;
Conference_Titel :
Power Semiconductor Devices and ICs, 2000. Proceedings. The 12th International Symposium on
Conference_Location :
Toulouse
Print_ISBN :
0-7803-6269-1
DOI :
10.1109/ISPSD.2000.856768
