Title :
Low voltage CMOS compatible power MOSFET for on-chip DC/DC converters
Author :
Nassif-Khalil, Sameh G. ; Honarkhah, Shahla ; Salama, C. Andre T
Author_Institution :
Dept. of Electr. & Comput. Eng., Toronto Univ., Ont., Canada
Abstract :
1 A lateral Power MOSFET switch, implemented in a 0.25 μm-5 metal CMOS process and suitable for high-frequency switch mode on-chip DC/DC converters is described in this paper. The fabricated device has an active chip area of 130 μm×130 μm and exhibits an on-resistance of 40.37 mΩ (a specific on-resistance of 6.82 μΩcm2) and a total gate charge of 0.105 nC at VGS=3.3 V
Keywords :
DC-DC power convertors; field effect transistor switches; low-power electronics; power MOSFET; power semiconductor switches; 0.25 micron; 1 A; 3.3 V; gate charge; high-frequency switch mode on-chip DC/DC converter; lateral power MOSFET switch; low voltage CMOS process; on-resistance; CMOS process; DC-DC power converters; Dynamic voltage scaling; Low voltage; MOSFET circuits; Power MOSFET; Stacking; Switches; Ultra large scale integration; Voltage control;
Conference_Titel :
Power Semiconductor Devices and ICs, 2000. Proceedings. The 12th International Symposium on
Conference_Location :
Toulouse
Print_ISBN :
0-7803-6269-1
DOI :
10.1109/ISPSD.2000.856769
