• DocumentCode
    2237792
  • Title

    Improved 20 V lateral trench gate power MOSFETs with very low on-resistance of 7.8 mΩ·mm2

  • Author

    Nakagawa, Alao ; Kawaguchi, Yuki

  • Author_Institution
    Adv. Discrete Semicond. Technol. Lab., Toshiba Corp., Kawasaki, Japan
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    47
  • Lastpage
    50
  • Abstract
    We propose an improved lateral trench gate MOSFET with a new trench drain contact. The device is predicted to achieve 25 V breakdown voltage and a very low on-resistance of 7.8 mΩ·mm2 , which is by 20% lower than that of previously proposed standard lateral trench gate MOSFETs. The proposed trench contact uniformly distributes the electron current in the drift layer, and effectively reduces the device on-resistance. In the present paper, we also show the detailed electrical characteristics of the fabricated standard trench gate LDMOS. The large current turn-off capability of 1.1×104 A/cm2 was achieved by the fabricated device
  • Keywords
    power MOSFET; 20 V; LDMOS device; breakdown voltage; current turn-off; electrical characteristics; lateral trench gate power MOSFET; on-resistance; trench drain contact; Application software; CMOS process; Computer peripherals; Contacts; Electric variables; Electrons; Laboratories; MOSFETs; Metalworking machines;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Semiconductor Devices and ICs, 2000. Proceedings. The 12th International Symposium on
  • Conference_Location
    Toulouse
  • ISSN
    1063-6854
  • Print_ISBN
    0-7803-6269-1
  • Type

    conf

  • DOI
    10.1109/ISPSD.2000.856770
  • Filename
    856770
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2237792