Title :
Folded gate LDMOS with low on-resistance and high transconductance
Author :
Xu, Shuming ; Zhu, Yuanzheng ; Foo, Pang-Dow ; Liang, Yung C. ; Sin, Johnny K O
Author_Institution :
Inst. of Microelectron., Singapore
Abstract :
In this paper, a novel LDMOSFET is proposed with low on-resistance and high transconductance. The silicon substrate surface is trenched by using an extra mask, resulting in a folded gate structure. The channel density is doubled in the experiment. With the Folded Gate LDMOS (FG-gate LDMOS) concept, the on-resistance was reduced by 40%, while the transconductance was improved by 80%. The significance of the folded gate concept will be available for CMOS and other MOS-gated devices
Keywords :
power MOSFET; channel density; folded gate LDMOSFET; on-resistance; silicon substrate; transconductance; Consumer electronics; Energy management; Low voltage; Microelectronics; Power electronics; Power engineering and energy; Power integrated circuits; Silicon compounds; Surface resistance; Transconductance;
Conference_Titel :
Power Semiconductor Devices and ICs, 2000. Proceedings. The 12th International Symposium on
Conference_Location :
Toulouse
Print_ISBN :
0-7803-6269-1
DOI :
10.1109/ISPSD.2000.856772
