DocumentCode
2237832
Title
Folded gate LDMOS with low on-resistance and high transconductance
Author
Xu, Shuming ; Zhu, Yuanzheng ; Foo, Pang-Dow ; Liang, Yung C. ; Sin, Johnny K O
Author_Institution
Inst. of Microelectron., Singapore
fYear
2000
fDate
2000
Firstpage
55
Lastpage
58
Abstract
In this paper, a novel LDMOSFET is proposed with low on-resistance and high transconductance. The silicon substrate surface is trenched by using an extra mask, resulting in a folded gate structure. The channel density is doubled in the experiment. With the Folded Gate LDMOS (FG-gate LDMOS) concept, the on-resistance was reduced by 40%, while the transconductance was improved by 80%. The significance of the folded gate concept will be available for CMOS and other MOS-gated devices
Keywords
power MOSFET; channel density; folded gate LDMOSFET; on-resistance; silicon substrate; transconductance; Consumer electronics; Energy management; Low voltage; Microelectronics; Power electronics; Power engineering and energy; Power integrated circuits; Silicon compounds; Surface resistance; Transconductance;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices and ICs, 2000. Proceedings. The 12th International Symposium on
Conference_Location
Toulouse
ISSN
1063-6854
Print_ISBN
0-7803-6269-1
Type
conf
DOI
10.1109/ISPSD.2000.856772
Filename
856772
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