Title :
Comparative study of geometry-dependent capacitances of planar FETs and double-gate FinFETs: Optimization and process variation
Author :
Sohn, Chang-Woo ; Kang, Chang Yong ; Baek, Rock-Hyun ; Choi, Do-Young ; Sagong, Hyun Chul ; Jeong, Eui-Young ; Jeong-Soo Lee ; Kirsch, Paul ; Jammy, Raj ; Lee, Jeong-Soo ; Jeong, Yoon-Ha
Author_Institution :
SEMATECH, Austin, TX, USA
Abstract :
We quantitatively compared the parasitic capacitance of the planar FETs and the DG FinFETs. Optimization with a fixed Sfin-to-Hfin ratio significantly reduces Cpara/W, which renders DG FinFETs comparable to planar FETs. Process variation on Wfin and Hfin should be controlled, otherwise, the Cpara uniformity will be worse for DG FinFETs than it is planar FETs.
Keywords :
MOSFET; optimisation; double-gate FinFET; geometry-dependent capacitances; optimization; parasitic capacitance; planar FET; process variation; Capacitance; Degradation; FinFETs; Geometry; Logic gates; Statistical distributions;
Conference_Titel :
VLSI Technology, Systems, and Applications (VLSI-TSA), 2012 International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
978-1-4577-2083-3
DOI :
10.1109/VLSI-TSA.2012.6210129
