DocumentCode
2237864
Title
Analysis of the forward biased safe operating area of the super junction MOSFET
Author
Zhang, Bo ; Xu, Zhenxue ; Huang, Alex Q.
Author_Institution
Center for Power Electron. Syst., Virginia Polytech. Inst. & State Univ., Blacksburg, VA, USA
fYear
2000
fDate
2000
Firstpage
61
Lastpage
64
Abstract
In this paper, the forward biased safe operating area (FBSOA) of the super junction MOSPET (also called CoolMOS) is studied. The FBSOA of a 600-V CoolMOS transistor-SPP20N60S5 is experimentally obtained. The FBSOA characteristic and the FBSOA failure mechanisms are analyzed in detail with the help of numerical simulations. The impact of the charge imbalance on the FBSOA is also studied in this work
Keywords
power MOSFET; 600 V; CoolMOS transistor; SPP20N60S5; charge imbalance; forward biased safe operating area; numerical simulation; super junction MOSFET; Breakdown voltage; Circuit testing; Doping; Electrodes; Failure analysis; MOSFET circuits; Numerical simulation; Power MOSFET; Power electronics; Pulse circuits;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices and ICs, 2000. Proceedings. The 12th International Symposium on
Conference_Location
Toulouse
ISSN
1063-6854
Print_ISBN
0-7803-6269-1
Type
conf
DOI
10.1109/ISPSD.2000.856773
Filename
856773
Link To Document