Title :
Highly efficient, charge balanced blue phosphorescent OLEDs employing wide band gap host with p-i-n architecture
Author :
Chopra, Neetu ; Lee, Jaewon ; So, Franky
Author_Institution :
Dept. of Mater. Sci. & Eng., Univ. of Florida, Gainesville, FL
Abstract :
In this study we report the use of a wide band gap host host p-bis (triphenylsilyly) benzene (UGH2) for Iridium (III) bis [(4, 6-difluorophenyl)-pyridinato-N, C2´] picolinate (FIrpic) based devices. The wide band gap host serves to confine the charge carriers in the emitting layer. Also the high triplet energy of the host efficiently confines all the excitons on the dopant molecules. A systematic effort is made to enhance the performance of blue phosphorescent organic light emitting diodes using the UGH2 host. The device performance of the intrinsic device was further enhanced by incorporation of a p-i-n architecture to tune the charge balance in the device.
Keywords :
colour displays; organic light emitting diodes; organic semiconductors; phosphorescence; semiconductor heterojunctions; wide band gap semiconductors; Iridium (III) bis [(4, 6-difluorophenyl)-pyridinato-N, C2´] picolinate; charge balanced blue phosphorescent OLED; charge carriers; excitons; high triplet energy; intrinsic device performance; organic light emitting diodes; p-bis (triphenylsilyly) benzene; p-i-n architecture; wide band gap host; Carrier confinement; Charge carrier processes; Excitons; Optical devices; Organic light emitting diodes; PIN photodiodes; Phosphorescence; Radiative recombination; Spontaneous emission; Wideband; (160.4890) Organic materials; (230.3670) Light-emitting diodes; (250.0250) Optoelectronics;
Conference_Titel :
Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-55752-859-9