Advanced on-chip polysilicon CMOS analog and driver circuit technology for intelligent discrete devices

In this paper, we investigate the analog and driver circuit performances of 0.8 μm gate length polysilicon CMOS fabricated on a thermal oxide film. Especially, we report the capability of load short-circuit protection circuit and high-side driver circuit. For the first time, it is found that the improved polysilicon analog circuits works sufficiently rapidly to protect high voltage power devices. It was experimentally confirmed that a 20 A/600 V high power IGBT can be driven and safely protected from load short-circuit failure by the polysilicon circuits within 200 nsec. It was also shown that a polysilicon high-side driver circuit with a charge pump successfully switched on a 25 A/60 V MOSFET within 130 μsec