• DocumentCode
    2238217
  • Title

    On the amplitude of random telegraph noise

  • Author

    Cheung, Kin P. ; Campbell, J.P. ; Potbhare, S. ; Oates, A.

  • Author_Institution
    Nat. Inst. of Stand. & Technol., Gaithersburg, MD, USA
  • fYear
    2012
  • fDate
    23-25 April 2012
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    A simple physical model is developed to show that the “hole-in-the-inversion-layer” model for RTN is in fact correct. This simple model allows RTN amplitude for future devices to be predicted intuitively and quantitatively. The model provides additional incite into the physics of RTN in MOSFETs.
  • Keywords
    MOSFET; semiconductor device noise; MOSFET; RTN amplitude; hole-in-the-inversion-layer model; physical model; random telegraph noise; Dielectrics; Equations; Fluctuations; Logic gates; Mathematical model; Noise; Semiconductor process modeling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, Systems, and Applications (VLSI-TSA), 2012 International Symposium on
  • Conference_Location
    Hsinchu
  • ISSN
    1930-8868
  • Print_ISBN
    978-1-4577-2083-3
  • Type

    conf

  • DOI
    10.1109/VLSI-TSA.2012.6210145
  • Filename
    6210145
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2238217