New observations on the AC random telegraph noise (AC RTN) in nano-MOSFETs

Author

Wang, Runsheng ; Zou, Jibin ; Xu, Xiaoqing ; Liu, Changze ; Liu, Jinhua ; Wu, Hanming ; Wang, Yangyuan ; Huang, Ru

Author_Institution

Inst. of Microelectron., Peking Univ., Beijing, China

fYear

2012

fDate

23-25 April 2012

Firstpage

1

Lastpage

2

Abstract

The random telegraph noise (RTN) is becoming a critical issue for variability and reliability in nanoscale MOSFETs. Since devices actually operate under AC signals in digital circuits, it is essential to investigate the AC RTN at dynamic voltage, instead of traditional DC RTN at fixed gate bias. In this paper, the AC RTN in nano-MOSFETs is experimentally studied in detail, with the focus on the time domain. Various RTN parameters are investigated, in terms of frequency dependence and bias dependence, which are important for robust circuit design against RTN.

Keywords

MOSFET; network synthesis; semiconductor device noise; semiconductor device reliability; AC RTN; AC random telegraph noise; AC signals; bias dependence; digital circuits; dynamic voltage; frequency dependence; nanoscale MOSFET; reliability; robust circuit design; time domain; Digital circuits; Logic gates; MOSFETs; Noise; Time frequency analysis; Very large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, Systems, and Applications (VLSI-TSA), 2012 International Symposium on

Conference_Location

Hsinchu

ISSN

1930-8868

Print_ISBN

978-1-4577-2083-3

Type

conf

DOI

10.1109/VLSI-TSA.2012.6210146

Filename

6210146