Title :
Embedded Metal Source/Drain (eMSD) for series resistance reduction in In0.53Ga0.47As n-channel Ultra-Thin Body Field-Effect Transistor (UTB-FET)
Author :
Subramanian, Sujith ; Ivana ; Yeo, Yee-Chia
Author_Institution :
Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore (NUS), Singapore, Singapore
Abstract :
We report a novel n-channel Ultra-Thin Body Field-Effect Transistor (UTB-FET) comprising an embedded Metal Source/Drain (eMSD) formed in a quasi-insulating InAlAs region. The InAlAs barrier layer reduces off-state leakage current IOFF significantly. The eMSD consists of conductive Ni-InGaAs and Ni-InAlAs layers, and has a low sheet resistance Rsh of ~20 Ω/square. This achieves a significant reduction in the parasitic S/D resistance Rsd, as compared with a conventional UTB-FET with thin S/D.
Keywords :
aluminium compounds; field effect transistors; gallium arsenide; indium compounds; leakage currents; nickel; InAlAs barrier layer; Ni-InAlAs; Ni-InGaAs; UTB-FET; embedded metal source/drain; low sheet resistance; n-channel ultra-thin body field-effect transistor; off-state leakage current; quasiinsulating InAlAs region; series resistance reduction; FETs; Indium gallium arsenide; Logic gates; Nickel;
Conference_Titel :
VLSI Technology, Systems, and Applications (VLSI-TSA), 2012 International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
978-1-4577-2083-3
DOI :
10.1109/VLSI-TSA.2012.6210150
