Embedded Metal Source/Drain (eMSD) for series resistance reduction in In0.53Ga0.47As n-channel Ultra-Thin Body Field-Effect Transistor (UTB-FET)

Author

Subramanian, Sujith ; Ivana ; Yeo, Yee-Chia

Author_Institution

Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore (NUS), Singapore, Singapore

fYear

2012

fDate

23-25 April 2012

Firstpage

1

Lastpage

2

Abstract

We report a novel n-channel Ultra-Thin Body Field-Effect Transistor (UTB-FET) comprising an embedded Metal Source/Drain (eMSD) formed in a quasi-insulating InAlAs region. The InAlAs barrier layer reduces off-state leakage current I_OFF significantly. The eMSD consists of conductive Ni-InGaAs and Ni-InAlAs layers, and has a low sheet resistance R_sh of ~20 Ω/square. This achieves a significant reduction in the parasitic S/D resistance R_sd, as compared with a conventional UTB-FET with thin S/D.

Keywords

aluminium compounds; field effect transistors; gallium arsenide; indium compounds; leakage currents; nickel; InAlAs barrier layer; Ni-InAlAs; Ni-InGaAs; UTB-FET; embedded metal source/drain; low sheet resistance; n-channel ultra-thin body field-effect transistor; off-state leakage current; quasiinsulating InAlAs region; series resistance reduction; FETs; Indium gallium arsenide; Logic gates; Nickel;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, Systems, and Applications (VLSI-TSA), 2012 International Symposium on

Conference_Location

Hsinchu

ISSN

1930-8868

Print_ISBN

978-1-4577-2083-3

Type

conf

DOI

10.1109/VLSI-TSA.2012.6210150

Filename

6210150