Metal stanogermanide contacts with enhanced thermal stability for high mobility germanium-tin field-effect transistor

Author

Wang, Lanxiang ; Han, Genquan ; Su, Shaojian ; Zhou, Qian ; Yang, Yue ; Guo, Pengfei ; Wang, Wei ; Tong, Yi ; Lim, Phyllis Shi Ya ; Xue, Chunlai ; Wang, Qiming ; Cheng, Buwen ; Yeo, Yee-Chia

Author_Institution

Dept. Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore, Singapore

fYear

2012

fDate

23-25 April 2012

Firstpage

1

Lastpage

2

Abstract

We report a novel metal stanogermanide contact metallization process for high-mobility germanium-tin (Ge_0.947Sn_0.053 or GeSn) channel p-MOSFETs. Nickel-Platinum (NiPt) alloy was used to react with GeSn to form a multi-phase Ni and Pt stanogermanide [NiGeSn+Pt_x(GeSn)_y] contact on epitaxial Ge_0.947Sn_0.053. Rapid thermal annealing of co-sputtered Ni and Pt on GeSn/Ge (100) at temperatures from 350 °C to 550 °C in N₂ was used for the stanogermanide formation. Compared with nickel stanogermanide (NiGeSn) contact, the Pt-incorporated contact, i.e. NiGeSn+Pt_x(GeSn)_y, exhibits enhanced thermal stability in a wide range of formation temperatures.

Keywords

MOSFET; field effect transistors; germanium compounds; metallisation; nickel alloys; platinum alloys; rapid thermal annealing; sputtering; thermal stability; GeSn; NiPt; channel p-MOSFET; high mobility field-effect transistor; metal stanogermanide contact metallization; rapid thermal annealing; stanogermanide formation; temperature 350 C to 550 C; thermal stability; Annealing; Films; MOSFETs; Nickel; Stability analysis; Thermal stability; X-ray scattering;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, Systems, and Applications (VLSI-TSA), 2012 International Symposium on

Conference_Location

Hsinchu

ISSN

1930-8868

Print_ISBN

978-1-4577-2083-3

Type

conf

DOI

10.1109/VLSI-TSA.2012.6210151

Filename

6210151