Title :
A study of novel ALD beryllium oxide as an interface passivation layer for Si MOS devices
Author :
Yum, J.H. ; Bersuker, G. ; Hudnall, Todd W. ; Bielawski, C.W. ; Kirsch, P. ; Banerjee, S.K.
Author_Institution :
SEMATECH, Austin, TX, USA
Abstract :
To overcome the issues of mobility degradation and charge trapping between the Si channel and high-k gate dielectric in metal-oxide-semiconductor field effect transistors (MOSFETs), thin BeO layers are deposited by atomic layer deposition (ALD) between (100) p-Si substrates and HfO2 high-k gate dielectric as an alternative interface passivation layer (IPL) to SiO2. We discuss the electrical properties of BeO/HfO2 gate stacks in MOSFETs. Compared to SiO2/HfO2 and Al2O3/HfO2 reference gate stacks, the novel dielectric, BeO, exhibits high drive current, slightly elevated transconductance (Gm), low subthreshold swing (SS), and high mobility at a high electric field.
Keywords :
MOSFET; atomic layer deposition; beryllium compounds; hafnium compounds; high-k dielectric thin films; passivation; silicon; silicon compounds; (100) p-Si substrates; ALD beryllium oxide; BeO-HfO2; MOSFET; Si; Si MOS devices; Si channel; SiO2; atomic layer deposition; charge trapping; drive current; electrical properties; high-k gate dielectric; interface passivation layer; metal-oxide-semiconductor field effect transistors; mobility degradation; thin BeO layers; transconductance; Aluminum oxide; Charge carrier processes; Dielectrics; Hafnium compounds; Logic gates; MOSFETs; Silicon;
Conference_Titel :
VLSI Technology, Systems, and Applications (VLSI-TSA), 2012 International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
978-1-4577-2083-3
DOI :
10.1109/VLSI-TSA.2012.6210153
