Title :
17 G directly modulated datacom VCSELs
Author :
Johnson, Ralph H. ; Serkland, Darwin K.
Author_Institution :
Adv. Opt. Components Div., Finisar, Allen, TX
Abstract :
The next generation 850 nm datacom VCSEL to go into production will be the 17 G VCSEL. It is not certain that direct modulation will be suitable given the reliability, supply voltage, and temperature range required. This paper is a first look at VCSELs designed and targeted for production 17 G use. The design is discussed and LIV and small signal frequency response is presented.
Keywords :
optical fibre LAN; optical modulation; optical transmitters; semiconductor lasers; surface emitting lasers; telecommunication network reliability; LAN; LIV characteristics; VCSEL design; directly modulated datacom VCSEL; reliability aspects; small signal frequency response; wavelength 850 nm; Absorption; Apertures; Bonding; Doping; Implants; Optical design; Optical devices; Quantum capacitance; Threshold current; Vertical cavity surface emitting lasers; 140.7260;
Conference_Titel :
Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-55752-859-9
