Title :
25 Gbit/s-100 °C operation and high reliability of 1.1-μm-range VCSELs with InGaAs/GaAsP strain-compensated MQWs
Author :
Hatakeyama, H. ; Akagawa, T. ; Fukatsu, K. ; Suzuki, N. ; Yashiki, K. ; Tokutome, K. ; Anan, T. ; Tsuji, M.
Author_Institution :
Nanoelectron. Res. Labs., NEC Corp., Otsu
Abstract :
We developed 1.1-mum-range oxide-implant VCSELs with InGaAs/GaAsP strain-compensated MQWs. 25 Gbit/s-100degC error-free operation and high reliability over 3000 hours under 150degC operation were successfully demonstrated.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser beams; quantum well lasers; reliability; surface emitting lasers; InGaAs-GaAsP; bit rate 25 Gbit/s; error-free operation; multiple quantum well laser; oxide-implant VCSEL reliability; strain-compensated MQW; temperature 100 C; temperature 150 C; vertical-cavity surface-emitting lasers; wavelength 1.1 mum; Apertures; Capacitive sensors; Epitaxial layers; Error-free operation; Gallium arsenide; Indium gallium arsenide; Optical interconnections; Quantum well devices; Temperature; Vertical cavity surface emitting lasers; (140.7260); (250.7260);
Conference_Titel :
Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-55752-859-9
