All-optical low-power switch based on III-V/SOI heterogeneous integration

Author

Tassaert, M. ; Roelkens, G. ; Van Thourhout, D. ; Baets, R.

Author_Institution

Photonics Res. Group, Ghent Univ., Ghent, Belgium

fYear

2009

fDate

15-19 Sept. 2009

Firstpage

1

Lastpage

2

Abstract

We propose an integrated all-optical switch with a low operating power that allows continuous wave operation. To achieve switching in an efficient way, we use the free carrier dispersion effect in a III-V multi-quantum well layer bonded on a silicon on insulator ring resonator. Using Mach-Zehnder interferometers for coupling light in and out the ring, we theoretically show that switching with an extinction ratio of 10 dB at a pump power of only 300 muW is achievable.

Keywords

III-V semiconductors; Mach-Zehnder interferometers; integrated optics; optical resonators; optical switches; quantum well devices; semiconductor quantum wells; silicon-on-insulator; III-V multiquantum well layer; Mach-Zehnder interferometer; SOI; Si-SiO₂; all-optical low-power switch; free carrier dispersion effect; heterogeneous integration; integrated all-optical switch; power 300 muW; silicon on insulator ring resonator; Absorption; Bonding; Charge carrier density; Dispersion; III-V semiconductor materials; Laser excitation; Optical coupling; Optical ring resonators; Silicon on insulator technology; Switches; All-optical switch; heterogeneous integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Photonics in Switching, 2009. PS '09. International Conference on

Conference_Location

Pisa

Print_ISBN

978-1-4244-3857-0

Electronic_ISBN

978-1-4244-3856-3

Type

conf

DOI

10.1109/PS.2009.5307854

Filename

5307854