Title :
Enhancement of sensitivity and conductivity of semiconducting Ga 2O3 gas sensors by doping with SnO2
Author :
Frank, J. ; Fleischer, M. ; Meixner, H. ; Feltz, A.
Author_Institution :
Corp. Technol., Siemens AG, Munich, Germany
Abstract :
The use of high temperature operated metal oxides, like Ga2 O3 thin films, for gas sensors shows promising properties in terms of reproducibility, long-term stability against interfering gases and low cross sensitivity to humidity. It is shown that by employing SnO2 (0.1-3%at) as the doping material a very effective donor for Ga2O3 has been found which allows an increase in conductivity up to two orders of magnitude as well as an enhancement of the gas-sensitivity. This is the basis for a significant reduction of the sensor chip size to obtain a reduction in the heating power
Keywords :
electrical conductivity; gallium compounds; gas sensors; high-temperature techniques; semiconductor doping; semiconductor materials; semiconductor thin films; tin compounds; Ga2O3:SnO2; SnO2 doping; conductivity; gas-sensitivity enhancement; heating power reduction; high temperature operated metal oxides; humidity low cross sensitivity; interfering gases; long-term stability; n-type semiconductor; reproducibility; semiconducting Ga2O3 gas sensors; sensor chip size; Conductivity; Gas detectors; Gases; Humidity; Reproducibility of results; Semiconductivity; Semiconductor thin films; Stability; Temperature sensors; Thin film sensors;
Conference_Titel :
Solid State Sensors and Actuators, 1997. TRANSDUCERS '97 Chicago., 1997 International Conference on
Conference_Location :
Chicago, IL
Print_ISBN :
0-7803-3829-4
DOI :
10.1109/SENSOR.1997.635261
