Title :
Characteristics of HfZrOx gate stack engineering for reliability improvement on 28nm HK/MG CMOS technology
Author :
Tsai, C.H. ; Yang, C.W. ; Hsu, C.H. ; Lai, C.M. ; Lo, K.Y. ; Chen, C.G. ; Huang, R.M. ; Tsai, C.T. ; Hung, L.S. ; You, J.W. ; Hung, W.H. ; Chen, T.F. ; Cheng, O. ; Wu, J.Y. ; Tzou, S.F. ; Liang, C.W. ; Chen, I.C.
Author_Institution :
Adv. Technol. Div., United Microelectron. Corp. Ltd. (UMC), Tainan, Taiwan
Abstract :
High-K/Metal-Gate (HK/MG) reliability TDDB and BTI are investigated systematically for the first time through HfZrOx gate stack engineering. To meet reliability requirements, it is shown that the HK film thickness, the position and concentration of a Zr dopant, utilizing post deposition anneal (PDA), and decoupled plasma nitridation (DPN) are important factors.
Keywords :
CMOS integrated circuits; annealing; electric breakdown; integrated circuit reliability; nitridation; BTI; CMOS technology; HfZrOx; TDDB; bias temperature instability; decoupled plasma nitridation; dopant concentration; gate stack engineering; high k-metal gate reliability; post deposition anneal; reliability improvement; size 28 mum; time-dependent dielectric breakdown; Films; Hafnium compounds; Logic gates; Semiconductor device reliability; Zirconium;
Conference_Titel :
VLSI Technology, Systems, and Applications (VLSI-TSA), 2012 International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
978-1-4577-2083-3
DOI :
10.1109/VLSI-TSA.2012.6210162
