Title :
Minority carrier injection across the 3D RESURF junction
Author :
Udrea, F. ; Popescu, A. ; Ng, R. ; Amaratunga, G.A.J.
Author_Institution :
Dept. of Eng., Cambridge Univ., UK
Abstract :
In this paper we report a novel class of semiconductor devices termed 3D devices, based on the application of the RESURF concept to the the third dimension. For the first time we demonstrate devices based on pure three-dimensional on-state/blocking operation with the third-dimension junction acting to enhance the breakdown capability in the voltage blocking mode and provide conductivity modulation in the on-state. A brief discussion of the ideal substrate to enhance breakdown performance is also given
Keywords :
minority carriers; power semiconductor devices; semiconductor device breakdown; 3D RESURF junction; electric breakdown; lateral power device; minority carrier injection; on-state conductivity modulation; semiconductor device; voltage blocking mode; Breakdown voltage; Conductivity; Doping; Electric breakdown; Home appliances; Motor drives; Power conversion; Semiconductor devices; Silicon; Substrates;
Conference_Titel :
Power Semiconductor Devices and ICs, 2000. Proceedings. The 12th International Symposium on
Conference_Location :
Toulouse
Print_ISBN :
0-7803-6269-1
DOI :
10.1109/ISPSD.2000.856806
