Title :
Thin-body FinFET as scalable low voltage transistor
Author_Institution :
Dept. of EECS, Univ. of California, Berkeley, CA, USA
Abstract :
FinFET provides needed relief to ICs from performance, power, and device variation predicaments. It also provides higher carrier mobility, especially at low voltage near the threshold voltage, giving promise to practical near-threshold circuits. Another new transistor conceived simultaneously with FinFET, UTB-SOI FET, is also entering production. Together they showed a new scaling path forward: scale the body thickness in proportion to gate length.
Keywords :
MOSFET; silicon-on-insulator; UTB-SOI FET; carrier mobility; device variation predicament; gate length; near-threshold circuit; scalable low voltage transistor; scaling path; thin-body FinFET; threshold voltage; Abstracts; Films; FinFETs; Fluctuations; Logic gates; MOSFET circuits; Random access memory;
Conference_Titel :
VLSI Technology, Systems, and Applications (VLSI-TSA), 2012 International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
978-1-4577-2083-3
DOI :
10.1109/VLSI-TSA.2012.6210163
