DocumentCode
2238761
Title
4500 V trench IEGTs having superior turn-on switching characteristics
Author
Ninomiya, Hideaki ; Takahashi, Junji ; Sugiyama, Koich ; Inoue, Tomoki ; Hasegawa, Shigeru ; Ogura, Tsuneo ; Ohashi, Hiromichi
Author_Institution
Semicond. Co., Toshiba Corp., Kawasaki, Japan
fYear
2000
fDate
2000
Firstpage
221
Lastpage
224
Abstract
Turn-on characteristics of 4500 V trench IEGTs are discussed. First, turn-on switching power loss was measured using an inductive load circuit. As a result, the turn-on switching power loss of trench IEGTs was smaller than that of planer IEGTs because of high density of MOS-channels. Then di/dt ruggedness of trench IEGTs was measured using a LC resonance circuit. It is concluded that trench IEGTs have a sufficiently di/dt ruggedness
Keywords
power semiconductor switches; power transistors; 4500 V; LC resonance circuit; di/dt ruggedness; inductive load circuit; trench IEGT; turn-on switching power loss; Charge carrier processes; Electrical resistance measurement; Loss measurement; Power measurement; Pulse circuits; Pulse measurements; Roentgenium; Switching circuits; Time measurement; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices and ICs, 2000. Proceedings. The 12th International Symposium on
Conference_Location
Toulouse
ISSN
1063-6854
Print_ISBN
0-7803-6269-1
Type
conf
DOI
10.1109/ISPSD.2000.856811
Filename
856811
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