A novel Ccb and Rb reduction technique for high-speed SiGe HBTs

Author

Cheng, Peng ; Liu, Qizhi ; Camillo-Castillo, Renata ; Liedy, Bob ; Adkisson, James ; Pekarik, John ; Gray, Peter ; Kaszuba, Philip ; Moszkowicz, Leon ; Zetterlund, Bjorn ; Macha, Keith ; Tallman, Kurt ; Khater, Marwan ; Harame, David

Author_Institution

IBM T.J. Watson Res. Center, Yorktown Heights, NY, USA

fYear

2012

fDate

Sept. 30 2012-Oct. 3 2012

Firstpage

1

Lastpage

4

Abstract

In this paper, we discuss a novel technique to reduce base resistance (R_b) and collector-base capacitance (C_cb) for higher F_max in high-speed SiGe HBTs. In order to reduce C_cb, we first located the origins of the different components of C_cb through AC extraction. Then we utilized scanning capacitance measurements (SCM) to examine the shape of the collector-base depletion. We then propose a method to reduce the extrinsic C_cb, namely by using reticle enhancement techniques to print a blocking oxide layer to inhibit boron outdiffusion. An additional benefit was the reduction of R_b by reducing the base link resistance.

Keywords

Ge-Si alloys; heterojunction bipolar transistors; semiconductor materials; AC extraction; Ccb reduction technique; Rb reduction technique; SCM; SiGe; base link resistance; base resistance reduction technique; blocking oxide layer; boron outdiffusion; collector-base capacitance reduction technique; collector-base depletion; high-speed HBT; reticle enhancement techniques; scanning capacitance measurements; Boron; Capacitance; Capacitance measurement; Implants; Performance evaluation; Silicon carbide; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2012 IEEE

Conference_Location

Portland, OR

ISSN

1088-9299

Print_ISBN

978-1-4673-3020-6

Type

conf

DOI

10.1109/BCTM.2012.6352616

Filename

6352616