Title :
Adaptive matching for efficiency enhancement of GAN class-F power amplifiers
Author :
El Din, Mohamed Gamal ; Geck, Bernd ; Eul, H.
Author_Institution :
Inst. of Radiofreq. & Microwave Eng., Leibniz Univ. of Hannover, Hannover, Germany
Abstract :
In this work a 6 W GaN based class-F amplifier is presented. The presented amplifier uses an adaptive matching output network to achieve high efficiency over 8.5 dB output dynamic range. The output matching network is an L matching network with a tunable inductor and a tunable capacitor. The tunable inductor is based on a lambda/4 impedance inverter and a switchable capacitor bank. The tunable inductor presents a short circuit for the second harmonic and an open circuit to the third harmonic; additionally together with the tunable capacitor they present the optimum working impedance for the transistor. The designed amplifier has a power added efficiency of 72.0% at an output power of 38 dBm and through using adaptive matching it can achieve a PAE of 58% at an output power of 29.5 dBm, in contrast to a PAE of only 26% in the case of using a fixed matching network.
Keywords :
III-V semiconductors; circuit tuning; gallium compounds; impedance convertors; invertors; power amplifiers; switched capacitor networks; wide band gap semiconductors; GaN; L matching network; adaptive matching output network; class-F power amplifier efficiency enhancement; lambda/4 impedance inverter; power 6 W; switchable capacitor bank; tunable capacitor; tunable inductor; Adaptive systems; Dynamic range; Gallium nitride; Impedance matching; Inductors; Inverters; Power amplifiers; Power generation; Switched capacitor networks; Tunable circuits and devices; Impedance inverter; adaptive matching; class-F; power amplifiers;
Conference_Titel :
Wireless Sensing, Local Positioning, and RFID, 2009. IMWS 2009. IEEE MTT-S International Microwave Workshop on
Conference_Location :
Cavtat
Print_ISBN :
978-1-4244-5060-2
Electronic_ISBN :
978-1-4244-5062-6
DOI :
10.1109/IMWS2.2009.5307863
