Title :
A newly structured high voltage diode highlighting oscillation free function in recovery process
Author :
Satoh, K. ; Morishita, K. ; Yamaguchi, Y. ; Hirano, Naoki ; Iwamoto, H. ; Kawakami, A.
Author_Institution :
Power Device Div., Mitsubishi Electr. Corp., Japan
Abstract :
At present, switching devices with high performance such as GCT (Gate Commutated Turn-off) thyristor and IGBT which had higher operation voltage than about 4.5 kV have been realized. However, as a freewheeling diode which should realize the suitable recovery performance to the turn-on performance of those switching devices is not successful, they were restricted in the turn-on operation for inverter systems. Therefore, advanced diodes with high operation voltage and soft recovery performance are desired in order to improve the system performance
Keywords :
Q-factor; p-i-n diodes; power semiconductor diodes; 4.5 kV; high voltage diode; operation voltage; oscillation free function; recovery process; soft recovery performance; turn-on operation; Anodes; Circuits; Cities and towns; Diodes; Insulated gate bipolar transistors; Inverters; Power engineering and energy; System performance; Thyristors; Voltage;
Conference_Titel :
Power Semiconductor Devices and ICs, 2000. Proceedings. The 12th International Symposium on
Conference_Location :
Toulouse
Print_ISBN :
0-7803-6269-1
DOI :
10.1109/ISPSD.2000.856818
