DocumentCode
2238953
Title
Electrical characterization and reliability investigations of Cu TSVs with wafer-level Cu/Sn-BCB hybrid bonding
Author
Chang, Y.J. ; Ko, C.T. ; Hsiao, Z.C. ; Yu, T.H. ; Chen, Y.H. ; Lo, W.C. ; Chen, K.N.
Author_Institution
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
fYear
2012
fDate
23-25 April 2012
Firstpage
1
Lastpage
2
Abstract
A wafer-level 3D integration structure with Cu TSVs based on Cu/Sn micro-bumps and BCB hybrid bonding is demonstrated. Kelvin structure and daisy chain design are adopted for electrical characterization and reliability evaluation. The results indicate the developed 3D integration scheme has excellent reliability and electrical stability.
Keywords
copper; integrated circuit interconnections; integrated circuit reliability; integrated circuit testing; three-dimensional integrated circuits; tin; wafer bonding; CuSn; Kelvin structure; TSV; daisy chain design; electrical stability; microbumps; reliability evaluation; through silicon vias; wafer level hybrid bonding; wafer-level 3D integration structure; Bonding; Resistance; Semiconductor device reliability; Three dimensional displays; Through-silicon vias; Tin; 3D integration; BCB; Cu/Sn; Hybrid bonding; TSV;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, Systems, and Applications (VLSI-TSA), 2012 International Symposium on
Conference_Location
Hsinchu
ISSN
1930-8868
Print_ISBN
978-1-4577-2083-3
Type
conf
DOI
10.1109/VLSI-TSA.2012.6210175
Filename
6210175
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