Title :
Junction termination technique for super junction devices
Author :
Bai, Yuming ; Huang, Alex Q. ; Li, Xuening
Author_Institution :
Bradley Dept. of Electr. Eng., Virginia Polytech. Inst. & State Univ., Blacksburg, VA, USA
Abstract :
The theory of junction termination for super junction devices is proposed in this paper. Using this theory, junction termination techniques for super junction structures are developed that achieve over 95% of the ideal breakdown voltage
Keywords :
electric fields; power semiconductor devices; semiconductor device breakdown; semiconductor device models; MEDICI simulations; breakdown voltage; design methods; electric field distribution; junction termination technique; super junction devices; Argon; Doping; Electric breakdown; Electric resistance; Equations; Insulated gate bipolar transistors; MOSFETs; Power electronics; Substrates; Switching loss;
Conference_Titel :
Power Semiconductor Devices and ICs, 2000. Proceedings. The 12th International Symposium on
Conference_Location :
Toulouse
Print_ISBN :
0-7803-6269-1
DOI :
10.1109/ISPSD.2000.856820
