DocumentCode
2238956
Title
Junction termination technique for super junction devices
Author
Bai, Yuming ; Huang, Alex Q. ; Li, Xuening
Author_Institution
Bradley Dept. of Electr. Eng., Virginia Polytech. Inst. & State Univ., Blacksburg, VA, USA
fYear
2000
fDate
2000
Firstpage
257
Lastpage
261
Abstract
The theory of junction termination for super junction devices is proposed in this paper. Using this theory, junction termination techniques for super junction structures are developed that achieve over 95% of the ideal breakdown voltage
Keywords
electric fields; power semiconductor devices; semiconductor device breakdown; semiconductor device models; MEDICI simulations; breakdown voltage; design methods; electric field distribution; junction termination technique; super junction devices; Argon; Doping; Electric breakdown; Electric resistance; Equations; Insulated gate bipolar transistors; MOSFETs; Power electronics; Substrates; Switching loss;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices and ICs, 2000. Proceedings. The 12th International Symposium on
Conference_Location
Toulouse
ISSN
1063-6854
Print_ISBN
0-7803-6269-1
Type
conf
DOI
10.1109/ISPSD.2000.856820
Filename
856820
Link To Document