Title :
Modeling collector current noise PSD of SiGe HBTs including self-heating and non-quasi-static effects
Author :
Kumar, Khamesh ; Chakravorty, Anjan
Author_Institution :
Dept. of Electr. Eng., IIT Madras, Chennai, India
fDate :
Sept. 30 2012-Oct. 3 2012
Abstract :
Limitations of existing models for collector current noise power spectral density of silicon germanium heterojunction bipolar transistors are figured out and suitable model modifications are proposed based on non-quasi-static delay and self-heating effects. Modeling results show excellent agreement with device simulated data obtained using hydrodynamic technique.
Keywords :
Ge-Si alloys; heat treatment; heterojunction bipolar transistors; hydrodynamics; HBT; SiGe; collector current noise PSD modelling; collector current noise power spectral density; heterojunction bipolar transistors; hydrodynamic technique; model modifications; nonquasistatic effects; self-heating effects; simulated data; Data models; Delay; Heterojunction bipolar transistors; Integrated circuit modeling; Noise; Scattering; Silicon germanium; NQS delay; SiGe HBT; electron diffusion noise; hole diffusion noise; noise PSD; self-heating;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2012 IEEE
Conference_Location :
Portland, OR
Print_ISBN :
978-1-4673-3020-6
DOI :
10.1109/BCTM.2012.6352623
