Title :
Thermal analysis of high power IGBT modules
Author :
Khatir, Zoubir ; Lefebvre, Stepliane
Author_Institution :
INRETS, Arcueil, France
Abstract :
The technology of high power IGBT modules has been improved significantly these last years against thermal fatigue and the first weaknesses related to the bonding die attach have been well enough corrected. Nowadays, the most frequently observed failure mode is the solder layer cracks between copper base plate material and the ceramic. Experimental tests must be completed by numerical simulation tools in order to analyze this type of failure related to power cycling constraints. Thermal simulations of high power IGBT modules based on the boundary element method are described in this paper. A validation of the numerical tool is shown in steady-state and dynamic operations during a power cycle by comparison with experimental measurements. Finally, using the software, a model of solder layer cracks between copper base plate and the DCB ceramic is applied in order to investigate its effect on the thermal constraints
Keywords :
boundary-elements methods; delamination; insulated gate bipolar transistors; modules; power transistors; semiconductor device packaging; temperature distribution; thermal analysis; thermal resistance; thermal stress cracking; BEM; Cu; Cu base plate material; DCB ceramic; boundary element method; dynamic operations; failure mode; high power IGBT modules; numerical simulation tools; power cycling constraints; solder delamination effect; solder layer cracks; steady-state operation; thermal analysis; thermal constraints; Bonding; Boundary element methods; Ceramics; Copper; Failure analysis; Fatigue; Insulated gate bipolar transistors; Microassembly; Numerical simulation; Testing;
Conference_Titel :
Power Semiconductor Devices and ICs, 2000. Proceedings. The 12th International Symposium on
Conference_Location :
Toulouse
Print_ISBN :
0-7803-6269-1
DOI :
10.1109/ISPSD.2000.856823
