Comparison of stripe and cellular geometry for short circuit rated trench IGBT

Author

Yun, Chong Man ; Kim, Hyun Chul ; Lee, Kyu Hyun ; Kim, Joo II ; Kim, Tae Hoon

Author_Institution

Fairchild Semicond., Kyunggi, South Korea

fYear

2000

fDate

2000

Firstpage

275

Lastpage

278

Abstract

600 V trench IGBTs with various cell structures including cellular and stripe geometry are implemented and their device characteristics are compared in terms of short-circuit ruggedness and device performances. The cellular IGBT which employs n+ source EBR and channel generated EBR shows 18 μs of SCWT and 1.7 V of Vce,sat while the stripe IGBT shows 16 μs and 1.8 V, respectively. Experimental results show that cellular geometry trench IGBT exhibits better short-circuit immunity than the stripe geometry

Keywords

insulated gate bipolar transistors; power transistors; semiconductor device breakdown; semiconductor device reliability; short-circuit currents; 1.7 V; 1.8 V; 16 mus; 18 mus; 600 V; cell structures; cellular geometry; channel generated EBR; device characteristics; device performances; geometry comparison; n+ source EBR; short circuit rated trench IGBT; short-circuit immunity; short-circuit ruggedness; stripe geometry; Bars; Capacitance; Circuits; Fabrication; Geometry; Insulated gate bipolar transistors; Inverters; Kilns; Power conversion; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 2000. Proceedings. The 12th International Symposium on

Conference_Location

Toulouse

ISSN

1063-6854

Print_ISBN

0-7803-6269-1

Type

conf

DOI

10.1109/ISPSD.2000.856824

Filename

856824