Title :
Design and analysis of new silicided nano crystal dots field programmable ESD protection structures in BiCMOS
Author :
Ma, Rui ; Shi, Zitao ; Wang, Xin ; Liu, Jian ; Zhao, Hui ; Wang, Li ; Dong, Zongyu ; Zhang, Chen ; Lin, Lin ; Zhou, Huimei ; Wang, Albert ; Liu, Jianlin ; Zhao, Bin ; Cheng, Yuhua
Author_Institution :
Univ. of California, Riverside, Riverside, CA, USA
fDate :
Sept. 30 2012-Oct. 3 2012
Abstract :
This paper discusses design and analysis of new nano crystal quantum dot (NC-QD) based field programmable electrostatic discharge (ESD) protection structures. Prototype NC-QD ESD structures were verified experimentally, achieving a wide ESD triggering voltage tuning range of 2.5V, very fast response time of ~100pS, ESD protection level of 25mA/μm in human body model (HBM) and 400mA/μm in charged device model (CDM), and very low leakage current of Ileak~15pA.
Keywords :
BiCMOS integrated circuits; electrostatic discharge; integrated circuit design; leakage currents; nanostructured materials; quantum dots; BiCMOS; ESD protection level; ESD triggering voltage tuning range; charged device model; electrostatic discharge; field programmable ESD protection structures; human body model; leakage current; silicided nanocrystal quantum dots; voltage 2.5 V; Crystals; Electrostatic discharges; Logic gates; MOSFET circuits; Programming; Prototypes; Testing; ESD protection; Nano Crystal Dot; electrostatic discharge;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2012 IEEE
Conference_Location :
Portland, OR
Print_ISBN :
978-1-4673-3020-6
DOI :
10.1109/BCTM.2012.6352627
