Mapping wafer flatness changes in chemical mechanical planarization

Author

Zhang, Y. ; Golubtsov, P. ; Yin, X. ; Parikh, P. ; Stephenson, B. ; Lee, J.

Author_Institution

ADE Corp., Newton, MA, USA

fYear

1996

fDate

12-14 Nov 1996

Firstpage

343

Lastpage

346

Abstract

This paper discusses the feasibility of using non-contact capacitive gauging technology for wafer flatness characterization in Chemical Mechanical Planarization (CMP). A simple but efficient method is introduced which provides guidance for CMP wafer flatness qualification per advanced lithography requirements. The statistical analysis quantitatively explains why CMP is an enabling technology for surface planarization in sub-half micron or less technologies. A gain of approximate 7% in terms of site flatness improvement at 0.18 μm technology is observed which represents a significant yield improvement from a lithographic perspective

Keywords

photolithography; semiconductor technology; statistical analysis; surface treatment; 0.18 micron; advanced lithography requirements; chemical mechanical planarization; noncontact capacitive gauging technology; site flatness improvement; statistical analysis; surface planarization; wafer flatness changes; Chemical technology; Focusing; Lithography; Microelectronics; Optical films; Planarization; Statistical analysis; Surface topography; Tensile stress; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Semiconductor Manufacturing Conference and Workshop, 1996. ASMC 96 Proceedings. IEEE/SEMI 1996

Conference_Location

Cambridge, MA

ISSN

1078-8743

Print_ISBN

0-7803-3371-3

Type

conf

DOI

10.1109/ASMC.1996.558033

Filename

558033