DocumentCode
2239085
Title
Characteristics of GaAs spike doped collectors
Author
Zampardi, P.J. ; Kwok, K. ; Cismaru, C. ; Sun, M. ; Lo, A.
Author_Institution
Skyworks Solutions, Newbury Park, CA, USA
fYear
2012
fDate
Sept. 30 2012-Oct. 3 2012
Firstpage
1
Lastpage
4
Abstract
Spike-doped collector designs have recently been studied in both Si BJT and GaAs HBTs as a way to improve the device linearity while still maintaining ruggedness. In this work, we present and discuss - for the first time - the very interesting output characteristics of these devices (unique Ic-Vce curves) and how they are influenced by the device design. We also explore the improvement in cut-off frequency versus current and application of these devices to actual power amplifiers and the resulting changes in ruggedness.
Keywords
III-V semiconductors; electric breakdown; gallium arsenide; heterojunction bipolar transistors; power amplifiers; power transistors; semiconductor doping; BJT; GaAs; HBT; cut-off frequency; device design; device linearity; power amplifiers; spike-doped collector designs; Doping profiles; Electric breakdown; Gallium arsenide; Linearity; Power amplifiers; GaAs HBT; breakdown; collector design; power transistor;
fLanguage
English
Publisher
ieee
Conference_Titel
Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2012 IEEE
Conference_Location
Portland, OR
ISSN
1088-9299
Print_ISBN
978-1-4673-3020-6
Type
conf
DOI
10.1109/BCTM.2012.6352628
Filename
6352628
Link To Document