Air monitoring by a combined resistive and field effect sensor device

Author

Hausner, Martin ; Storm, Uwe ; Karagözoglu, Hermann ; Zacheja, Johannes ; Binder, Josef

Author_Institution

Inst. for Microsensors, Actuators & Syst., Bremen Univ., Germany

Volume

2

fYear

1997

fDate

16-19 Jun 1997

Firstpage

963

Abstract

Reports on a new measurement method that can vary the sensitivity of resistive semiconductor gas sensors towards oxidizing gases. In addition to conventional interdigitated electrodes below the gas sensitive layer, the presented sensor device has a second one above the sensing thin film. An electric field, that is applied transversally to the tin oxide film, can deplete or enhance the semiconductor and thus influence the charge carrier concentration and the surface potential at the grain boundaries. Thus, an enhancement in selectivity can be expected

Keywords

air pollution measurement; carrier density; electric resistance; field effect devices; gas sensors; grain boundaries; semiconductor materials; semiconductor thin films; surface potential; tin compounds; NO₂; SO₂; Si; SnO₂; air monitoring; charge carrier concentration; conventional interdigitated electrodes; electric field; field effect sensor device; gas sensitive layer; grain boundaries; measurement method; n-type semiconductor; oxidizing gases; resistive semiconductor gas sensors; selectivity enhancement; semiconductor; sensing thin film; sensitivity; surface potential; tin oxide film; Charge carriers; Electrodes; Gas detectors; Gases; Monitoring; Semiconductor films; Semiconductor thin films; Thin film devices; Thin film sensors; Tin;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid State Sensors and Actuators, 1997. TRANSDUCERS '97 Chicago., 1997 International Conference on

Conference_Location

Chicago, IL

Print_ISBN

0-7803-3829-4

Type

conf

DOI

10.1109/SENSOR.1997.635263

Filename

635263