Title :
Experimental measurements of recombination lifetime in proton irradiated power devices
Author :
Daliento, Santolo ; Sanseverino, Annwiata ; Spirito, Paolo ; Busatto, Crlovanni ; Wiss, Jeff
Author_Institution :
Dept. of Electron. & Telecommun., Naples Univ., Italy
Abstract :
Experimental measurements of the recombination lifetime profile induced by proton implantation processes are presented. Results show the capability of the differential technique to monitor lifetime engineering processes
Keywords :
carrier lifetime; electron-hole recombination; ion implantation; power semiconductor devices; proton effects; semiconductor device measurement; differential technique; experimental measurements; lifetime engineering processes monitoring; lifetime profile; proton implantation processes; proton irradiated power devices; recombination lifetime; Carrier confinement; Life testing; Monitoring; Performance evaluation; Power engineering and energy; Power measurement; Protons; Radiative recombination; Semiconductor diodes; Silicon;
Conference_Titel :
Power Semiconductor Devices and ICs, 2000. Proceedings. The 12th International Symposium on
Conference_Location :
Toulouse
Print_ISBN :
0-7803-6269-1
DOI :
10.1109/ISPSD.2000.856826
