Title :
Electrical and electrothermal 2D simulations of a 4H-SiC high voltage current limiting device for serial protection applications
Author :
Nallet, F. ; Sénés, A. ; Planson, D. ; Locatelli, M.L. ; Chante, J.P. ; Renault, D.
Author_Institution :
Inst. Nat. des Sci. Appliquees, Villeurbanne, France
Abstract :
This work presents a novel field for solid state power devices: a 4H-SiC specific device is examined as a current limiting device for serial protection application. The device structure is a vertical power MOSFET like with a existing N channel. Its performances is simulated with ISE TCAD tools. A study of its electrothermal behavior is presented, demonstrating the SiC superiority over silicon with regard to this field
Keywords :
digital simulation; fault current limiters; overcurrent protection; power semiconductor devices; semiconductor device models; silicon compounds; thermal analysis; wide band gap semiconductors; 4H-SiC power device; HV current limiting device; ISE TCAD tools; N channel; SiC; electrical simulation; electrothermal 2D simulation; electrothermal behavior; high voltage device; serial protection applications; solid state power devices; vertical power MOSFET type structure; Current limiters; Electrothermal effects; MOSFET circuits; Power MOSFET; Power electronics; Protection; Silicon carbide; Solid state circuits; Temperature; Voltage;
Conference_Titel :
Power Semiconductor Devices and ICs, 2000. Proceedings. The 12th International Symposium on
Conference_Location :
Toulouse
Print_ISBN :
0-7803-6269-1
DOI :
10.1109/ISPSD.2000.856827
