A novel free wheeling diode for 1700 V IGBT module

Author

Iwamuro, Noriyuki ; Nagaune, Fumio ; Iwaana, Tadayoshi ; Seki, Yasukazu

Author_Institution

Fuji Hitachi Power Semicond. Co. Ltd., Nagano, Japan

fYear

2000

fDate

2000

Firstpage

295

Lastpage

298

Abstract

A novel free wheeling diode with its blocking capability of 1700 V is presented to realize an excellent trade-off characteristic between a forward voltage drop and a reverse recovery loss, for the first time. A superior forward voltage drop (Vf) of 1.85 V with the reverse recovery loss (Err) of 13.0 mJ is successfully achieved (a rated current is set at 100 amperes). These values of Vf and Err indicate the much superior trade-off characteristic to the conventional FWD. Furthermore, it should be noted that the newly developed FWD achieves a positive temperature coefficient of Vf, which is more advantageous for parallel connection of an IGBT module

Keywords

insulated gate bipolar transistors; modules; power semiconductor diodes; power transistors; 1.85 V; 100 A; 13 mJ; 1700 V; IGBT module; blocking capability; forward voltage drop; free wheeling diode; parallel connection; positive temperature coefficient; reverse recovery loss; tradeoff characteristic; Doping; Electrons; Insulated gate bipolar transistors; Inverters; Low voltage; P-i-n diodes; Power electronics; Schottky diodes; Semiconductor diodes; Temperature dependence;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 2000. Proceedings. The 12th International Symposium on

Conference_Location

Toulouse

ISSN

1063-6854

Print_ISBN

0-7803-6269-1

Type

conf

DOI

10.1109/ISPSD.2000.856829

Filename

856829