Title :
A novel free wheeling diode for 1700 V IGBT module
Author :
Iwamuro, Noriyuki ; Nagaune, Fumio ; Iwaana, Tadayoshi ; Seki, Yasukazu
Author_Institution :
Fuji Hitachi Power Semicond. Co. Ltd., Nagano, Japan
Abstract :
A novel free wheeling diode with its blocking capability of 1700 V is presented to realize an excellent trade-off characteristic between a forward voltage drop and a reverse recovery loss, for the first time. A superior forward voltage drop (Vf) of 1.85 V with the reverse recovery loss (Err) of 13.0 mJ is successfully achieved (a rated current is set at 100 amperes). These values of Vf and Err indicate the much superior trade-off characteristic to the conventional FWD. Furthermore, it should be noted that the newly developed FWD achieves a positive temperature coefficient of Vf, which is more advantageous for parallel connection of an IGBT module
Keywords :
insulated gate bipolar transistors; modules; power semiconductor diodes; power transistors; 1.85 V; 100 A; 13 mJ; 1700 V; IGBT module; blocking capability; forward voltage drop; free wheeling diode; parallel connection; positive temperature coefficient; reverse recovery loss; tradeoff characteristic; Doping; Electrons; Insulated gate bipolar transistors; Inverters; Low voltage; P-i-n diodes; Power electronics; Schottky diodes; Semiconductor diodes; Temperature dependence;
Conference_Titel :
Power Semiconductor Devices and ICs, 2000. Proceedings. The 12th International Symposium on
Conference_Location :
Toulouse
Print_ISBN :
0-7803-6269-1
DOI :
10.1109/ISPSD.2000.856829
