Title :
Carrier lifetime characterization using an optimized free carrier absorption technique
Author :
Hille, Frank ; Hoffmann, Ludwig ; Schulze, Hans-Joachim ; Wachutka, Gerhard
Author_Institution :
Inst. for Phys. & Electrotechnol., Tech. Univ. Munchen, Germany
Abstract :
We investigated the correlation of the high-level lifetime of platinum-diffused power diodes with the platinum diffusion temperature, varying over a range of 40 K, and the operating temperature, varying from 223 K to 398 K. The high-level lifetime has been extracted from carrier profiles determined by an optimized free carrier absorption technique, assuming a homogeneous lifetime over the base region. We find an exponential dependence of the high-level lifetime on the operating temperature and no dependence of the injection levels under investigation. Therefore, the recombination processes can be properly described by using the Shockley-Read-Hall model in the electrothermal device simulation. The mean high-level-lifetime for a calibrated device simulation is only 20% lower than the experimentally determined one. The simulated carrier distributions are in very good agreement with the experiment if a weak lifetime gradient in the base region is assumed
Keywords :
carrier lifetime; electron-hole recombination; power semiconductor diodes; semiconductor device measurement; 223 to 398 K; Shockley-Read-Hall model; Si:Pt; carrier distribution; carrier lifetime measurement; electrothermal device simulation; free carrier absorption; platinum diffusion; power diode; recombination process; Absorption; Charge carrier lifetime; Electrothermal effects; Measurement errors; P-i-n diodes; Physics; Platinum; Spatial resolution; Temperature dependence; Temperature distribution;
Conference_Titel :
Power Semiconductor Devices and ICs, 2000. Proceedings. The 12th International Symposium on
Conference_Location :
Toulouse
Print_ISBN :
0-7803-6269-1
DOI :
10.1109/ISPSD.2000.856830