Title :
Compact Modeling of MOSFETs Channel Noise for Low-Noise RF ICs Design
Author :
Lu, Zhi-Qiang ; Lai, Feng-Chang
Author_Institution :
Microelectron. Center, Harbin Inst. of Technol.
Abstract :
A compact modeling of MOSFETs channel noise is proposed by considering short-channel effects of deep submicron MOSFETs, such as mobility degradation, hot carrier, bulk charge and channel length modulation effects. The model is only dependent on bias, size and technology of MOSFETs, and hence is suitable for low-noise RF ICs design. Noise parameters of MOSFETs are achieved and good agreement between calculated and measured results is demonstrated
Keywords :
MOSFET; radiofrequency integrated circuits; semiconductor device models; MOSFET modeling; channel noise; low-noise RFIC design; noise parameters; short-channel effects; CMOS technology; Degradation; Hot carrier effects; MOSFETs; Microelectronics; Noise generators; Predictive models; Radio frequency; Solid modeling; Voltage; MOSFET; channel noise; compact modeling; noise parameters; short-channel effects;
Conference_Titel :
Circuits and Systems, 2006. APCCAS 2006. IEEE Asia Pacific Conference on
Conference_Location :
Singapore
Print_ISBN :
1-4244-0387-1
DOI :
10.1109/APCCAS.2006.342291
