Title :
Degradation Analysis of 808 nm GaAsP Laser Diodes
Author :
Häusler, K. ; Sumpf, B. ; Erbert, G. ; Trankle, G.
Author_Institution :
Ferdinand-Braun-Inst. fur Hochstfrequenztechnik, Berlin
Abstract :
Degradation data from accelerated life test of 808 nm strained GaAsP quantum well lasers are analyzed. The Eyring model and the statistical model of non-linear mixed effects are applied to estimate degradation parameters. The life time at operating condition is predicted at given confidence level.
Keywords :
III-V semiconductors; quantum well lasers; statistical analysis; Eyring model; GaAsP; laser diode degradation analysis; nonlinear mixed effect; quantum well laser; statistical model; wavelength 808 nm; Aging; Degradation; Diode lasers; Fiber lasers; Laser modes; Power lasers; Pump lasers; Quantum well lasers; Semiconductor lasers; Solid lasers;
Conference_Titel :
Lasers and Electro-Optics - Pacific Rim, 2007. CLEO/Pacific Rim 2007. Conference on
Conference_Location :
Seoul
Print_ISBN :
978-1-4244-1173-3
Electronic_ISBN :
978-1-4244-1174-0
DOI :
10.1109/CLEOPR.2007.4391194
