• DocumentCode
    2239409
  • Title

    GaSb-based high-power single-spatial-mode lasers at 2.0 μm

  • Author

    Franz, Kale J. ; Frez, Clifford ; Chen, Jianfeng ; Qiu, Yueming ; Freilich, Daniel V. ; Shterengas, Leon ; Belenky, Gregory L. ; Forouhar, Siamak

  • Author_Institution
    Jet Propulsion Lab., Pasadena, CA, USA
  • fYear
    2011
  • fDate
    1-6 May 2011
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We report single spatial mode diode lasers operating near 2.05 μm with room-temperature continuous-wave output power exceeding 100 mW. At 20°C, threshold currents were near 25 mA (320 A/cm2).
  • Keywords
    III-V semiconductors; gallium compounds; semiconductor lasers; high-power single-spatial-mode lasers; room-temperature continuous-wave output power; single spatial mode diode lasers; temperature 20 C; threshold currents; wavelength 2 mum; Fiber lasers; Laser modes; Laser radar; Measurement by laser beam; Power amplifiers; Semiconductor lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics (CLEO), 2011 Conference on
  • Conference_Location
    Baltimore, MD
  • Print_ISBN
    978-1-4577-1223-4
  • Type

    conf

  • Filename
    5950586
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2239409