DocumentCode :
2239409
Title :
GaSb-based high-power single-spatial-mode lasers at 2.0 μm
Author :
Franz, Kale J. ; Frez, Clifford ; Chen, Jianfeng ; Qiu, Yueming ; Freilich, Daniel V. ; Shterengas, Leon ; Belenky, Gregory L. ; Forouhar, Siamak
Author_Institution :
Jet Propulsion Lab., Pasadena, CA, USA
fYear :
2011
fDate :
1-6 May 2011
Firstpage :
1
Lastpage :
2
Abstract :
We report single spatial mode diode lasers operating near 2.05 μm with room-temperature continuous-wave output power exceeding 100 mW. At 20°C, threshold currents were near 25 mA (320 A/cm2).
Keywords :
III-V semiconductors; gallium compounds; semiconductor lasers; high-power single-spatial-mode lasers; room-temperature continuous-wave output power; single spatial mode diode lasers; temperature 20 C; threshold currents; wavelength 2 mum; Fiber lasers; Laser modes; Laser radar; Measurement by laser beam; Power amplifiers; Semiconductor lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2011 Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-4577-1223-4
Type :
conf
Filename :
5950586
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2239409
بازگشت