• DocumentCode
    2239468
  • Title

    SCR-LDMOS. A novel LDMOS device with ESD robustness

  • Author

    Pendharkar, Sameer ; Teggatz, Ross ; Devore, Joe ; Carpenter, John ; Efland, Taylor ; Tsai, Chin-Yu

  • Author_Institution
    Texas Instrum. Inc., Dallas, TX, USA
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    341
  • Lastpage
    344
  • Abstract
    A novel lateral power device structure with a very high degree of ESD (electrostatic discharge) robustness is presented. This device called the SCR-LDMOS is a modification of the lateral LDMOSFET with good on state and blocking characteristics
  • Keywords
    electrostatic discharge; power MOSFET; LDMOSFET; SCR-LDMOS; electrostatic discharge; lateral power device; Electrostatic discharge; Failure analysis; Impedance; Power integrated circuits; Protection; Robustness; Semiconductor optical amplifiers; Silicon; Thyristors; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Semiconductor Devices and ICs, 2000. Proceedings. The 12th International Symposium on
  • Conference_Location
    Toulouse
  • ISSN
    1063-6854
  • Print_ISBN
    0-7803-6269-1
  • Type

    conf

  • DOI
    10.1109/ISPSD.2000.856839
  • Filename
    856839
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2239468