Title :
SCR-LDMOS. A novel LDMOS device with ESD robustness
Author :
Pendharkar, Sameer ; Teggatz, Ross ; Devore, Joe ; Carpenter, John ; Efland, Taylor ; Tsai, Chin-Yu
Author_Institution :
Texas Instrum. Inc., Dallas, TX, USA
Abstract :
A novel lateral power device structure with a very high degree of ESD (electrostatic discharge) robustness is presented. This device called the SCR-LDMOS is a modification of the lateral LDMOSFET with good on state and blocking characteristics
Keywords :
electrostatic discharge; power MOSFET; LDMOSFET; SCR-LDMOS; electrostatic discharge; lateral power device; Electrostatic discharge; Failure analysis; Impedance; Power integrated circuits; Protection; Robustness; Semiconductor optical amplifiers; Silicon; Thyristors; Voltage;
Conference_Titel :
Power Semiconductor Devices and ICs, 2000. Proceedings. The 12th International Symposium on
Conference_Location :
Toulouse
Print_ISBN :
0-7803-6269-1
DOI :
10.1109/ISPSD.2000.856839
