Title :
Using “Adaptive resurf” to improve the SOA of LDMOS transistors
Author :
Hower, P. ; Lin, J. ; Merchant, S. ; Paiva, S.
Author_Institution :
Texas Instrum. Inc., Merrimack, NH, USA
Abstract :
Measured SOA is compared with simulations for field gap LDMOS transistors. The utility of an n-type “resurf” or “nfield” implant under the field oxide is considered. For a fixed VDS, it is shown that there is an optimum value of nfield dose
Keywords :
ion implantation; power MOSFET; Adaptive Resurf; LDMOS transistor; SOA; field gap structure; ion implantation; Automatic testing; Degradation; Driver circuits; Electrons; Implants; Instruments; Power integrated circuits; Semiconductor optical amplifiers; Silicon; Temperature;
Conference_Titel :
Power Semiconductor Devices and ICs, 2000. Proceedings. The 12th International Symposium on
Conference_Location :
Toulouse
Print_ISBN :
0-7803-6269-1
DOI :
10.1109/ISPSD.2000.856840
