Title :
Terahertz detector arrays in a high-performance SiGe HBT technology
Author :
Hadi, R.A. ; Grzyb, Janusz ; Heinemann, Bernd ; Pfeiffer, Ullrich
Author_Institution :
IHCT, Univ. of Wuppertal, Wuppertal, Germany
fDate :
Sept. 30 2012-Oct. 3 2012
Abstract :
This paper presents heterojunction bipolar transistor (HBT) based terahertz power detectors implemented in a 0.25-μm SiGe process technology. The detectors have been arranged in a 3 × 5-pixel FPA and characterized at 0.65 THz. Referred to the collecting aperature of a 3-mm diameter lens, a maximum current responsivity RI of 0.79 A/W and a minimum noise equivalent power NEP of 370 pW/√Hz have been measured at a 1-kHz chopping frequency.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; field effect MIMIC; focal planes; heterojunction bipolar transistors; submillimetre wave detectors; submillimetre wave imaging; FPA; HBT technology; NEP; SiGe; current responsivity; focal plane arrays; frequency 0.65 THz; heterojunction bipolar transistor; noise equivalent power; size 0.25 mum; size 3 mm; terahertz detector arrays; terahertz power detectors; Antennas; Detectors; Heterojunction bipolar transistors; Imaging; Lenses; Silicon; Silicon germanium; BiCMOS; HBT; SiGe; Submillimeter wave detectors; submillimeter wave imaging; terahertz direct detection;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2012 IEEE
Conference_Location :
Portland, OR
Print_ISBN :
978-1-4673-3020-6
DOI :
10.1109/BCTM.2012.6352643
