DocumentCode
2239515
Title
A new power MOSFET having excellent avalanche capability
Author
Uesugi, Tsutomu ; Suzuki, Takashi ; Murata, Toshio ; Kawaji, Sachiko ; Tadano, Hiroshi
Author_Institution
Toyota Central Res. & Dev. Labs. Inc., Aichi, Japan
fYear
2000
fDate
2000
Firstpage
349
Lastpage
352
Abstract
In this paper, we explore a new concept for improvement of an avalanche capability of a power MOSFET. The concept is to make parasitic bipolar transistors in all over the chip turn on, and to suppress breakdown current crowding. The avalanche capability of an UMOSFET applied this new concept was 1500 mJ. This value was about one order higher than that of a conventional UMOSFET
Keywords
avalanche breakdown; power MOSFET; semiconductor device breakdown; 1500 mJ; UMOSFET; avalanche capability; breakdown current crowding; parasitic bipolar transistor; power MOSFET; Automotive engineering; Bipolar transistors; Breakdown voltage; Diodes; Electric breakdown; MOSFET circuits; Power MOSFET; Pulse measurements; Robustness; Semiconductor device measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices and ICs, 2000. Proceedings. The 12th International Symposium on
Conference_Location
Toulouse
ISSN
1063-6854
Print_ISBN
0-7803-6269-1
Type
conf
DOI
10.1109/ISPSD.2000.856841
Filename
856841
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