Title :
A new power MOSFET having excellent avalanche capability
Author :
Uesugi, Tsutomu ; Suzuki, Takashi ; Murata, Toshio ; Kawaji, Sachiko ; Tadano, Hiroshi
Author_Institution :
Toyota Central Res. & Dev. Labs. Inc., Aichi, Japan
Abstract :
In this paper, we explore a new concept for improvement of an avalanche capability of a power MOSFET. The concept is to make parasitic bipolar transistors in all over the chip turn on, and to suppress breakdown current crowding. The avalanche capability of an UMOSFET applied this new concept was 1500 mJ. This value was about one order higher than that of a conventional UMOSFET
Keywords :
avalanche breakdown; power MOSFET; semiconductor device breakdown; 1500 mJ; UMOSFET; avalanche capability; breakdown current crowding; parasitic bipolar transistor; power MOSFET; Automotive engineering; Bipolar transistors; Breakdown voltage; Diodes; Electric breakdown; MOSFET circuits; Power MOSFET; Pulse measurements; Robustness; Semiconductor device measurement;
Conference_Titel :
Power Semiconductor Devices and ICs, 2000. Proceedings. The 12th International Symposium on
Conference_Location :
Toulouse
Print_ISBN :
0-7803-6269-1
DOI :
10.1109/ISPSD.2000.856841
