Long-term reliability of high-performance SiGe:C heterojunction bipolar transistors

Author

Fischer, G.G. ; Micusik, D. ; Pocej, A.

Author_Institution

IHP, Frankfurt (Oder), Germany

fYear

2012

fDate

Sept. 30 2012-Oct. 3 2012

Firstpage

1

Lastpage

4

Abstract

The reliability of high-performance SiGe:C HBTs was studied under mixed-mode stress conditions. We applied much longer stress-times than previous investigations and observed a not yet described saturation of the base current degradation with stress-time. This saturation behavior was integrated into an ageing function enabling improved prediction of HBT and RF circuit ageing during a 10 year life-time frame. Additionally, reverse stress tests confirmed also an increase of the baseemitter capacitance.

Keywords

carbon; heterojunction bipolar transistors; semiconductor device packaging; silicon compounds; SiGe:C; ageing function; base current degradation; baseemitter capacitance; high-performance heterojunction bipolar transistors; long-term reliability; longer stress-times; mixed-mode stress conditions; saturation behavior; Aging; Capacitance; Degradation; Heterojunction bipolar transistors; Radio frequency; Reliability; Stress; HBT reliability; Heterojunction bipolar transistors; RF circuits; bipolar modeling and simulation;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2012 IEEE

Conference_Location

Portland, OR

ISSN

1088-9299

Print_ISBN

978-1-4673-3020-6

Type

conf

DOI

10.1109/BCTM.2012.6352644

Filename

6352644