Title :
Long-term reliability of high-performance SiGe:C heterojunction bipolar transistors
Author :
Fischer, G.G. ; Micusik, D. ; Pocej, A.
Author_Institution :
IHP, Frankfurt (Oder), Germany
fDate :
Sept. 30 2012-Oct. 3 2012
Abstract :
The reliability of high-performance SiGe:C HBTs was studied under mixed-mode stress conditions. We applied much longer stress-times than previous investigations and observed a not yet described saturation of the base current degradation with stress-time. This saturation behavior was integrated into an ageing function enabling improved prediction of HBT and RF circuit ageing during a 10 year life-time frame. Additionally, reverse stress tests confirmed also an increase of the baseemitter capacitance.
Keywords :
carbon; heterojunction bipolar transistors; semiconductor device packaging; silicon compounds; SiGe:C; ageing function; base current degradation; baseemitter capacitance; high-performance heterojunction bipolar transistors; long-term reliability; longer stress-times; mixed-mode stress conditions; saturation behavior; Aging; Capacitance; Degradation; Heterojunction bipolar transistors; Radio frequency; Reliability; Stress; HBT reliability; Heterojunction bipolar transistors; RF circuits; bipolar modeling and simulation;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2012 IEEE
Conference_Location :
Portland, OR
Print_ISBN :
978-1-4673-3020-6
DOI :
10.1109/BCTM.2012.6352644
